The Analysis of the Polysilicon base Position of the Thermal Resistance and the Self Heating Effects of 0.13 µm SiGe Heterojunction Bipolar Transistors

Autor:	null Abdelaaziz Boulgheb, Maya Lakhdara, Saida Latreche
Rok vydání:	2022
Předmět:	Materials Chemistry Electrical and Electronic Engineering Condensed Matter Physics Electronic Optical and Magnetic Materials
Zdroj:	Russian Microelectronics. 51:192-198
ISSN:	1608-3415 1063-7397
DOI:	10.1134/s1063739722010036
Databáze:	OpenAIRE
Externí odkaz:	https://explore.openaire.eu/search/publication?articleId=doi_________::b18530f74f358538d096d74a81b37fc0 https://doi.org/10.1134/s1063739722010036 Zobrazit plný text záznamu Full text from SpringerLink