Influence of Intercell Trapped Charge on Vertical NAND Flash Memory
| Autor: | Byungin Lee, Hyun-Seung Yoo, Sung-Kye Park, Yong Jun Kim, Gyu-Seog Cho, Hyug Su Kwon, Woo Young Choi, SangMoo Choi |
|---|---|
| Rok vydání: | 2017 |
| Předmět: |
010302 applied physics
Hardware_MEMORYSTRUCTURES Materials science Nand flash memory business.industry Transconductance Electrical engineering NAND gate Charge (physics) Hardware_PERFORMANCEANDRELIABILITY 02 engineering and technology Nitride 021001 nanoscience & nanotechnology 01 natural sciences Flash memory Electronic Optical and Magnetic Materials Electric field 0103 physical sciences Hardware_INTEGRATEDCIRCUITS Optoelectronics Electrical and Electronic Engineering 0210 nano-technology business Hardware_LOGICDESIGN Degradation (telecommunications) |
| Zdroj: | IEEE Electron Device Letters. 38:164-167 |
| ISSN: | 1558-0563 0741-3106 |
| DOI: | 10.1109/led.2016.2643278 |
| Popis: | The influence of intercell trapped charge (ITC)-the charge trapped at the inter-cell nitride regions by fringe electric fields during program and erase operations-on vertical NAND (VNAND) flash memory is investigated. In addition to conventional degradation mechanisms such as tunnel oxide damage, ITC deteriorates the transconductance and read current of VNAND flash memory cells. The influence of ITC-induced degradation on VNAND flash memory is discussed, using both simulation and experimental results. A solution for ITC suppression is also proposed: the use of low-k intercell regions. |
| Databáze: | OpenAIRE |
| Externí odkaz: |
|