| Autor: |
Alexander Andrejew, M.-C. Amann, Stephan Sprengel, G. K. Veerabathran |
| Rok vydání: |
2017 |
| Předmět: |
|
| Zdroj: |
2017 IEEE Photonics Conference (IPC). |
| DOI: |
10.1109/ipcon.2017.8116083 |
| Popis: |
GaSb-based electrically-pumped vertical-cavity surface-emitting lasers at 3.93 μm, using type-II quantum wells are analyzed. Current broadening due to radial diffusion of carriers in the active region is estimated to be 4.2 μm and this is determined to be a major factor in limiting their performance. |
| Databáze: |
OpenAIRE |
| Externí odkaz: |
|
