Versatile instrument for MOSFET characterization
| Autor: | A. V. Klekachev, S. N. Kuznetsov, V. A. Gurtov, V. B. Pikulev |
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| Rok vydání: | 2008 |
| Předmět: |
Measure (data warehouse)
Materials science business.industry Electrical engineering USB Condensed Matter Physics Electronic Optical and Magnetic Materials law.invention Microcontroller Quality (physics) Software law MOSFET Personal computer Materials Chemistry Electrical and Electronic Engineering business Voltage |
| Zdroj: | Russian Microelectronics. 37:277-282 |
| ISSN: | 1608-3415 1063-7397 |
| DOI: | 10.1134/s1063739708040082 |
| Popis: | An instrument is presented for measuring major MOSFET parameters. It implements the method of charge pumping as well as providing static I–V characteristics. The former capability enables one to investigate the quality of semiconductor-insulator interfaces and to determine mean surface-state density. Employing a USB-compatible microcontroller, the instrument has a reasonable size (100 × 80 × 50 mm3), mass (300 g), and power consumption (at most 2.5 W). The instrument is controlled via a USB bus by a personal computer running specially designed software under Microsoft® Windows 2000/XP®. It can measure currents from 1 pA to 10 mA with the gate or drain voltage varied across the range ±10 V, the MOSFET under test being connected as a two-port. Mean surface-state densities down to 109 cm−2 eV−1 can be determined. |
| Databáze: | OpenAIRE |
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