GaAs/AlAs Superlattices and the Tight-Binding Model

Autor:	L.C. Lew Yan Voon, W. K. Ge, D. Helmholz
Rok vydání:	2002
Předmět:	Condensed Matter::Materials Science Tight binding Condensed matter physics Band gap Chemistry Superlattice Semiconductor materials Observable Gaas alas Condensed Matter::Mesoscopic Systems and Quantum Hall Effect Condensed Matter Physics Wave function Electronic Optical and Magnetic Materials
Zdroj:	physica status solidi (b). 231:457-461
ISSN:	1521-3951 0370-1972
DOI:	10.1002/1521-3951(200206)231:2<457::aid-pssb457>3.0.co;2-7
Popis:	A study of how well tight-binding models can reproduce the optoelectronic properties of GaAs/ AlAs superlattices is carried out. It is shown that two key parameter sets lead to observable differences in the pseudo-direct energy gap regime, as well as in the direct gap regime. In addition to the differences in bulk fitting, other less direct differences, such as wave function localization, are found to play a role.
Databáze:	OpenAIRE
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