Indium-doping-induced selenium vacancy engineering of layered tin diselenide for improving room-temperature sulfur dioxide gas sensing

Autor: Xuezheng Guo, Yijie Shi, Yanqiao Ding, Yuhui He, Bingsheng Du, Chengyao Liang, Yiling Tan, Peilin Liu, Xiangshui Miao, Yong He, Xi Yang
Rok vydání: 2022
Předmět:
Zdroj: Journal of Materials Chemistry A. 10:22629-22637
ISSN: 2050-7496
2050-7488
DOI: 10.1039/d2ta04317c
Popis: Cation-doping engineering was utilized to induce selenium vacancies in tin diselenide for high-performance and room-temperature sulfur dioxide gas sensing.
Databáze: OpenAIRE