Secondary ion mass spectrometry study of the formation of a nanometer oxide film on a titanium nitride surface
| Autor: | V. V. Naumov, S. G. Simakin, V. M. Mordvintsev |
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| Rok vydání: | 2016 |
| Předmět: |
010302 applied physics
Materials science Annealing (metallurgy) Oxide 02 engineering and technology Sputter deposition Nitride 021001 nanoscience & nanotechnology Condensed Matter Physics 01 natural sciences Titanium nitride Electronic Optical and Magnetic Materials Secondary ion mass spectrometry chemistry.chemical_compound chemistry Chemical engineering Sputtering 0103 physical sciences Titanium dioxide Materials Chemistry Electrical and Electronic Engineering 0210 nano-technology |
| Zdroj: | Russian Microelectronics. 45:242-255 |
| ISSN: | 1608-3415 1063-7397 |
| DOI: | 10.1134/s1063739716040065 |
| Popis: | Using secondary ion mass spectrometry, we investigate the oxidation of titanium nitride films fabricated by reactive magnetron sputtering under specific conditions of burning plasma in the argon and oxygen mixture in a vacuum chamber of a magnetron sputtering facility at annealing temperatures ranging from 350 to 440°С and times ranging from 2 to 11 min. It is shown that the oxidation is activated by the plasma, while thermal activation plays a secondary role. The oxide layer consists of the TiO2 layer and (3–5)-nm-thick intermediate layer between it and the bulk of titanium nitride, which is homogeneous over the sample surface and enriched with oxygen-containing complexes. The titanium dioxide layer thickness lies within 2–3.5 nm and depends on the annealing conditions. The effect of different factors on the layer thicknesses is investigated. The expression is obtained that satisfactorily describes the dependence of the TiO2 layer thickness on annealing temperature and time. |
| Databáze: | OpenAIRE |
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