Photoluminescence from RF sputtered SiCBN thin films
| Autor: | Arun Vijayakumar, Andrew P. Warren, Kalpathy B. Sundaram, Ravi M. Todi |
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| Rok vydání: | 2008 |
| Předmět: |
Photoluminescence
Materials science Silicon Annealing (metallurgy) Analytical chemistry Mineralogy chemistry.chemical_element Condensed Matter Physics Atomic and Molecular Physics and Optics Electronic Optical and Magnetic Materials Amorphous solid chemistry.chemical_compound Carbon film X-ray photoelectron spectroscopy chemistry Boron nitride Electrical and Electronic Engineering Thin film |
| Zdroj: | Journal of Materials Science: Materials in Electronics. 20:144-148 |
| ISSN: | 1573-482X 0957-4522 |
| DOI: | 10.1007/s10854-008-9667-4 |
| Popis: | Silicon carbon boron nitride (SiCBN) thin films were synthesized by reactive co-sputtering of silicon carbide (SiC) and boron nitride (BN) targets. As-deposited samples show distinct photoluminescence (PL) peaks at 465, 483 and 497 nm. The films were annealed in dry oxygen ambient at different temperatures to investigate the effect of annealing on film properties. Subsequent measurements on the annealed samples show diminished PL peak intensities. X-ray diffraction analysis shows that the as-deposited films are amorphous in nature and there is no change in the microstructure even after high temperature annealing. Surface characterization of the films by X-ray photoelectron spectroscopy reveals change in chemical composition at different annealing temperatures. Carbon concentrations in the films are sensitive to annealing temperatures and could cause the change in photoluminescence properties. |
| Databáze: | OpenAIRE |
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