Ion-Induced Energy Pulse Mechanism for Single-Event Burnout in High-Voltage SiC Power MOSFETs and Junction Barrier Schottky Diodes
| Autor: | Ronald D. Schrimpf, J. M. Hutson, Dennis R. Ball, Robert A. Johnson, Andrew L. Sternberg, Kenneth F. Galloway, Brian D. Sierawski, Robert A. Reed, Jean-Marie Lauenstein, A. F. Witulski, Michael L. Alles, Arto Javanainen |
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| Rok vydání: | 2020 |
| Předmět: |
Nuclear and High Energy Physics
Materials science 010308 nuclear & particles physics business.industry Schottky diode High voltage 01 natural sciences Ion chemistry.chemical_compound Nuclear Energy and Engineering chemistry Electric field 0103 physical sciences MOSFET Silicon carbide Optoelectronics Electrical and Electronic Engineering Power MOSFET business Diode |
| Zdroj: | IEEE Transactions on Nuclear Science. 67:22-28 |
| ISSN: | 1558-1578 0018-9499 |
| DOI: | 10.1109/tns.2019.2955922 |
| Popis: | Heavy-ion data suggest that a common mechanism is responsible for single-event burnout (SEB) in 1200-V power MOSFETs and junction barrier Schottky (JBS) diodes. Similarly, heavy-ion data suggest a common mechanism is also responsible for leakage current degradation in both devices. This mechanism, based on ion-induced, highly localized energy pulses, is demonstrated in simulations and shown to be capable of causing degradation and SEB for both the MOSFETs and JBS diodes. |
| Databáze: | OpenAIRE |
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