Influence of AlGaN/GaN/SiC Parameters of HEMPT-Transistors on Microwave Generators Phase Noises

Autor:	V. V. Gruzdov, K. L. Enisherlova, N.V. Davidov, C «S PE»Pulsar», Moscow, Russia, Yu. V. Kolkovsky, S. A. Kapilin
Rok vydání:	2017
Předmět:	Materials science business.industry law Phase (matter) Transistor Optoelectronics Algan gan business Microbiology Microwave law.invention
Zdroj:	Proceedings of Universities. ELECTRONICS. 22:460-470
ISSN:	2587-9960 1561-5405
DOI:	10.24151/1561-5405-2017-22-5-460-470
Databáze:	OpenAIRE
Externí odkaz:	https://explore.openaire.eu/search/publication?articleId=doi_________::ae5c96d07a5943ca6c6c415822f2d4bc https://doi.org/10.24151/1561-5405-2017-22-5-460-470 Zobrazit plný text záznamu