Analysis of the hysteresis in theI‐Vcharacteristics of vertically integrated, multipeaked resonant‐tunneling diodes

Autor:	Dave Shupe, Robert C. Potter, Hung C. Lin, Tai-Haur Kuo
Rok vydání:	1990
Předmět:	Hysteresis business.industry Chemistry Electrical resistivity and conductivity General Physics and Astronomy Optoelectronics Resonance Commutation business Vertical integration Circuit diagram Quantum tunnelling Diode
Zdroj:	Journal of Applied Physics. 68:2496-2498
ISSN:	1089-7550 0021-8979
DOI:	10.1063/1.346513
Popis:	The hysteresis (extrinsic) and current‐voltage (I‐V) characteristics of the multiwell, vertically integrated, resonant‐tunneling diode are analyzed. Our analysis shows that hysteresis in the vertically integrated diode I‐V can result from interchanging the order in which the devices switch, depending if the bias is increasing or decreasing. Experimental results are presented that support this analysis.
Databáze:	OpenAIRE
Externí odkaz:	https://explore.openaire.eu/search/publication?articleId=doi_________::ae57c88527f4e60a154f44303346272d https://doi.org/10.1063/1.346513 Zobrazit plný text záznamu