GaN Electronics for High Power, High Temperature Applications

Autor:	S. J. Pearton, F. Ren, A. P. Zhang, G. Dang, X. A. Cao, H. Cho, C. R. Abernathy, J. Han, A. G. Baca, C. Monier, P. Chang, R J. Shul, L. Zhang, J. M. Van Hove, P. P. Chow, J. J. Klaassen, C. J. Polley, A. M. Wowchack, D. J. King, S. N. G. Chu, M. Hong, A. Y. Polyakov, N. B. Smirnov, A. V. Govorkov, J.-I. Chyi, C.-M. Lee, T.-E. Nee, C.-C. Chuo, G. C. Chi
Rok vydání:	2000
Předmět:	Fabrication Materials science business.industry Bipolar junction transistor Transistor Heterojunction Gallium nitride High voltage law.invention chemistry.chemical_compound chemistry law Power electronics Electrochemistry Optoelectronics Field-effect transistor business
Zdroj:	The Electrochemical Society Interface. 9:34-39
ISSN:	1944-8783 1064-8208
DOI:	10.1149/2.f06002if
Popis:	The commercialization of blue, green, and white GaN-based light-emitting diodes and violet laser diodes has created tremendous interest both from an applications viewpoint and for the basic science of the AlGaInN materials system. The fact that extremely efficient light emission can be achieved in heteroepitaxial layers of these materials grown on lattice mismatched substrates such as sapphire is counter to the experience of almost 40 years of semiconductor light source technology.
Databáze:	OpenAIRE
Externí odkaz:	https://explore.openaire.eu/search/publication?articleId=doi_________::adc124a229201a4c42e65def740dc6be https://doi.org/10.1149/2.f06002if Zobrazit plný text záznamu