Electrical and optical properties of gallium vacancy complexes in ammonothermal GaN
Autor: | Mark P. D'Evelyn, Dirk Ehrentraut, Wenkan Jiang, Mackenzy Nolan |
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Rok vydání: | 2017 |
Předmět: |
010302 applied physics
education.field_of_study Materials science Population General Engineering Analytical chemistry General Physics and Astronomy chemistry.chemical_element Cathodoluminescence 02 engineering and technology 021001 nanoscience & nanotechnology 01 natural sciences Secondary ion mass spectrometry chemistry Vacancy defect 0103 physical sciences Limiting oxygen concentration Gallium Fourier transform infrared spectroscopy 0210 nano-technology Spectroscopy education |
Zdroj: | Applied Physics Express. 10:075506 |
ISSN: | 1882-0786 1882-0778 |
Popis: | Bulk GaN crystals were grown by the acidic ammonothermal method and doped with oxygen at concentrations ranging from 1.5 × 1018 to 2.7 × 1019 cm−3. VGa complexes were detected by Fourier transform infrared (FTIR) spectroscopy. Quantitative comparison with secondary ion mass spectrometry (SIMS) and Hall measurements provides the first experimental evidence for VGa–H–O complexes and shows that these complexes are the dominant compensatory defects, the population of which is controlled by the oxygen concentration. The energy level of these complexes was determined by correlating oxygen concentration with optical absorption and with sub-band-gap cathodoluminescence peaks. The effect of these complexes on device performance is discussed. |
Databáze: | OpenAIRE |
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