Dissociative Adsorption of Dimethyl Sulfoxide at the Ge(100)-2 × 1 Surface
| Autor: | Stacey F. Bent, Keith Tatseun Wong, Sonali N. Chopra |
|---|---|
| Rok vydání: | 2012 |
| Předmět: |
Inorganic chemistry
chemistry.chemical_element Germanium Sulfoxide Photochemistry Dissociation (chemistry) Surfaces Coatings and Films Electronic Optical and Magnetic Materials chemistry.chemical_compound General Energy Adsorption chemistry X-ray photoelectron spectroscopy Molecule Dimethyl sulfide Physical and Theoretical Chemistry Methyl group |
| Zdroj: | The Journal of Physical Chemistry C. 116:26422-26430 |
| ISSN: | 1932-7455 1932-7447 |
| DOI: | 10.1021/jp309418e |
| Popis: | Methods for passivating the germanium surface must be developed in order to fully exploit its electrical properties in devices. Passivation by formation of Ge–S bonds has proven most effective to date, spurring interest in adsorption of sulfur-containing molecules on the germanium surface. In this study, we investigate adsorption of dimethyl sulfoxide (DMSO) on the Ge(100)-2 × 1 surface in ultrahigh vacuum. By a combination of density functional theory calculations, Fourier transform infrared spectroscopy, and X-ray photoelectron spectroscopy, we find that DMSO undergoes two dissociative adsorption reactions on the Ge(100)-2 × 1 surface: S–C dissociation and S═O dissociation. The former produces a surface-bound methyl group and CH3SO fragment bound to germanium through the oxygen, while the latter yields adsorbed atomic oxygen and dimethyl sulfide, which desorbs to vacuum. It is shown that the reactivity of DMSO is greatly affected by the dipolar character of the sulfoxide bond, which drives the reaction ... |
| Databáze: | OpenAIRE |
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