Field-Effect Mobility of InAs Surface Channel nMOSFET With Low $D_{\rm it}$ Scaled Gate-Stack

Autor:	Timothy Vasen, Yang-Sih Chang, Stephen Thoms, Gordon C. H. Hsieh, Peter Ramvall, Yee-Chia Yeo, Gerben Doornbos, S. Wang, Chien-Hsun Wang, Georgios Vellianitis, Richard Kenneth Oxland, Carlos H. Diaz, Martin Christopher Holland, Xu Li, Iain G. Thayne, Kaimin M. Yin, Douglas Macintyre, Shang-Wen Chang, Ravi Droopad, M. Edirisooriya, Matthias Passlack, R. Contreras-Guerrero, J.S. Rojas-Ramirez
Rok vydání:	2015
Předmět:	Negative voltage business.industry Chemistry Electrical engineering Gate stack Gate length Field effect Equivalent oxide thickness Electron Electronic Optical and Magnetic Materials State density Subthreshold swing Electrical and Electronic Engineering Atomic physics business
Zdroj:	IEEE Transactions on Electron Devices. 62:2429-2436
ISSN:	1557-9646 0018-9383
Popis:	Frequency (100 ${\rm Hz}\le f \le 1$ MHz) and temperature ( $- 50 \le T \le 20^{\circ }\text{C}$ ) characteristics of low interface state density $D_{\rm {it}}$ high- $\kappa $ gate-stacks on n-InAs have been investigated. Capacitance–voltage ( $C$ – $V$ ) curves exhibit typical accumulation/depletion/inversion behavior with midgap $D_{\rm {it}}$ of $2\times 10^{11}$ and $4\times 10^{11}$ cm $^{-2}$ eV $^{-1}$ at −50 °C and 20 °C, respectively. Asymmetry of low-frequency s $C$ – $V$ curves and $C$ – $T$ dependence for negative voltage showing a sharp transition of $\cong -20$ dB/decade between low- and high-frequency behavior indicate surface inversion. An inversion carrier activation energy and an InAs hole lifetime of 0.32 eV and 2 ns have been extracted, respectively. Surface channel nMOSFETs with gate length $L_{g} =$ 1 $\mu \text{m}$ , channel thickness = 10 nm, and equivalent oxide thickness (EOT) $1 \le {\rm EOT} \le 1.6$ nm have been fabricated. For ${\rm EOT} = 1$ nm, a subthreshold swing $S = 65$ mV/decade, transconductance $g_{m} =1.6$ mS/ $\mu \text{m}$ , and ON-current $I_{{\mathrm{{\scriptscriptstyle ON}}}} =$ 426 $\mu \text{A}/\mu \text{m}$ at an OFF-current $I_{{\mathrm{{\scriptscriptstyle OFF}}}} =100$ nA/ $\mu \text{m}$ (supply voltage $V_{\rm {dd}} =$ 0.5 V) have been measured. Peak electron field-effect mobilities of 6000–7000 cm $^{2}$ /Vs at sheet electron densities of 2– $3\times 10^{12}$ cm $^{-2}$ were obtained for EOT as small as 1 nm.
Databáze:	OpenAIRE
Externí odkaz:	https://explore.openaire.eu/search/publication?articleId=doi_________::ac271353f023dc6565f788d0713ce7cb https://doi.org/10.1109/ted.2015.2445854 Zobrazit plný text záznamu