Refractive index profile of waveguide in NdLiP4O12 laser crystal formed by MeV He+ ion implantation

Autor:	Fei Lu, Ding-Yu Shen, Ke-Ming Wang, Feng Chen, Qingming Lu, Chang-Qin Ma, Bo-Rong Shi, Hui Hu
Rok vydání:	2001
Předmět:	Nuclear and High Energy Physics Materials science Photoluminescence Analytical chemistry Refractive index profile Crystal structure Laser Waveguide (optics) law.invention Crystal Ion implantation law Instrumentation Refractive index
Zdroj:	Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms. 184:378-382
ISSN:	0168-583X
DOI:	10.1016/s0168-583x(01)00789-3
Popis:	The fabrication and characterization of a planar waveguide are reported in NdLiP 4 O 12 crystal which can be used for low-threshold, miniature laser. The photoluminescence (PL) measurement shows that there are three peaks around 0.911, 1.077 and 1.366 μm for bulk NdLiP 4 O 12 . Rutherford backscattering/channeling has been used to check the composition and quality of NdLiP 4 O 12 crystal. A waveguide laser in NdLiP 4 O 12 crystal is formed with MeV He ions. The refractive index profiles, n x , n y and n z in NdLiP 4 O 12 waveguide are given. The changes of refractive index profiles n x , n y and n z are 6.11%, 6.51% and 9.37%, respectively. The refractive index change strongly depends on the crystal structure.
Databáze:	OpenAIRE
Externí odkaz:	https://explore.openaire.eu/search/publication?articleId=doi_________::abbc65694492fc7d893fc199860dc21f https://doi.org/10.1016/s0168-583x(01)00789-3 Zobrazit plný text záznamu Full Text from ScienceDirect