Evaluation of the minority carrier diffusion length and edge surface‐recombination velocity in GaAsp/nsolar cells

Autor:	Roshanak Hakimzadeh, Sheila G. Bailey, Hans J. Möller
Rok vydání:	1992
Předmět:	Recombination velocity Chemistry business.industry General Physics and Astronomy Electron Edge (geometry) Molecular physics law.invention Optics law Solar cell Irradiation Diffusion (business) p–n junction business Recombination
Zdroj:	Journal of Applied Physics. 72:2919-2922
ISSN:	1089-7550 0021-8979
DOI:	10.1063/1.351494
Popis:	The hole minority carrier diffusion length (Lp) and the edge surface‐recombination velocity (Vs) were measured as a function of distance (x) from the p‐n junction in GaAs p/n concentrator solar cells. The measured Vs values were used in a theoretical expression for the normalized electron beam‐induced current. A fit of the experimental data was used to determine Lp. Lp measured in irradiated cells showed a marked reduction as compared to the unirradiated cells. Our results were compared to results obtained in previous studies that did not account for Vs.
Databáze:	OpenAIRE
Externí odkaz:	https://explore.openaire.eu/search/publication?articleId=doi_________::ab965e137643ce4ce9f13407db82d671 https://doi.org/10.1063/1.351494 Zobrazit plný text záznamu