Appearance of flaws in layers of AlxGa1?xSb solid solutions during epitaxial growth from the liquid phase

Autor:	F. S. Kim, V. P. Germogenov, L. E. Épiktetova, A. A. Vilisov
Rok vydání:	1976
Předmět:	Materials science General Physics and Astronomy Liquid phase chemistry.chemical_element Substrate (electronics) Epitaxy Solvent Gallium antimonide chemistry.chemical_compound chemistry Aluminium Composite material Layer (electronics) Solid solution
Zdroj:	Soviet Physics Journal. 19:745-750
ISSN:	1573-9228 0038-5697
DOI:	10.1007/bf00943473
Popis:	Layers of AlxGa1−xSb (x≤0.7) solid solutions were grown epitaxially from the liquid phase on substrates of gallium antimonide. Aluminum was added to the melt during the buildup of an epitaxial layer. In these layers were found inclusions of the solvent as well as regions of localized chemical inhomogeneities. It is shown here that the appearance of such flaws is intimately related to the relief which the GaSb substrate has formed by the time aluminum enters into the solution. A mechanism of this flaw formation is suggested.
Databáze:	OpenAIRE
Externí odkaz:	https://explore.openaire.eu/search/publication?articleId=doi_________::aa8b056aa2e3d4c9b8c795696550d959 https://doi.org/10.1007/bf00943473 Zobrazit plný text záznamu Full text from SpringerLink