First results from GaAs double-sided detectors

Autor: Marcello Colocci, J.G. Lynch, Val O'Shea, F. Combley, B.K. Jones, Paul Seller, S.P. Beaumont, I. O. Skillicorn, Filippo Nava, G. Hughes, B. Lisowski, Kevin M. Smith, Saverio D'Auria, Y. Hou, M. Edwards, Craig Buttar, Peter A. Houston, L. Carraresi, P.H. Sharp, C. N. Booth, J. Santana, F. Foster, T. J. Sloan, I.J. Saunders, M. Nuti, P.G. Pelfer, J. Matheson, G. Hill, M. Dogru, R. Bertin, C. Raine, U. Vanni, R. Gray, A. Francescato, I. ten Have, R. M. Turnbull, K. Shankar, Federico Cindolo, Antonino Zichichi, C. Del Papa, S. Gowdy
Rok vydání: 1994
Předmět:
Zdroj: Nuclear Instruments and Methods in Physics Research Section A: Accelerators, Spectrometers, Detectors and Associated Equipment. 348:514-517
ISSN: 0168-9002
Popis: Preliminary results are presented on the performance of double-sided microstrip detectors using Schottky contacts on both sides of a semi-insulating (SI) GaAs substrate wafer, after exposure to 1014 neutrons cm−2 at the ISIS facility. A qualitative explanation of the device behaviour is given.
Databáze: OpenAIRE