Temperature Compensated Floating Gate MOS Radiation Sensor With Current Output

Autor:	Eugeni Isern, Miquel Roca, E. Garcia-Moreno, Rodrigo Picos, J. Font, A. Pineda, J. Cesari
Rok vydání:	2013
Předmět:	Nuclear and High Energy Physics Materials science business.industry Linearity Nuclear Energy and Engineering CMOS Absorbed dose Low-power electronics MOSFET Optoelectronics Electrical and Electronic Engineering Floating-gate MOSFET business Sensitivity (electronics) Voltage
Zdroj:	IEEE Transactions on Nuclear Science. 60:4026-4030
ISSN:	1558-1578 0018-9499
DOI:	10.1109/tns.2013.2277605
Popis:	This paper presents an improved version of our previous gamma radiation sensor based on a floating gate MOSFET whose output current is changed by the total ionizing dose. Both versions exhibit zero bias operation and reprogramming capabilities. They have been designed in a standard CMOS technology, require little silicon area, and exhibit low power consumption. Sensitivity to radiation dose is -11.4 μA/krad, dose range over 3.6 krad, and lowest detectable dose lower than 2 rad. The new version features much higher linearity and supply voltage rejection and much lower sensitivity to ambient temperature.
Databáze:	OpenAIRE
Externí odkaz:	https://explore.openaire.eu/search/publication?articleId=doi_________::a804a76f5f2d16ad7ecfbedbd9615f8d https://doi.org/10.1109/tns.2013.2277605 Zobrazit plný text záznamu