Autor: |
Christoph Langer, Josef Biba, Andreas Pahlke, Walter Hansch, Marinus Werber, Simon Edler, Felix Düsberg, Andreas Schels, Michael Bachmann |
Rok vydání: |
2020 |
Předmět: |
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Zdroj: |
2020 33rd International Vacuum Nanoelectronics Conference (IVNC). |
Popis: |
A novel silicon field emission source is presented, which is fabricated by saw dicing and TMAH-etching. Samples with different tip densities were investigated. Due to the fabrication process a higher tip density leads to a lower tip height. Very similar characteristics were observed for all different geometries. Emission currents of 10 $\mu\mathrm{A}$ are obtained at electrical fields of 6 - 8 $\mathrm{V}/\mu \mathrm{m}$ . The changes in the characteristics after 10 h at a regulated current of 10 $\mu\mathrm{m}\mathrm{A}$ and a pressure of 10–5 mbar were investigated. The observed shift in necessary field reduces with the number of tips and is lower in p-type compared to n-type samples. |
Databáze: |
OpenAIRE |
Externí odkaz: |
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