Formation of stacked oxide/Y2TiO5/oxide layers for flash memory application

Autor:	Tung-Ming Pan, Jing-Wei Chen, Wen-Wei Yeh
Rok vydání:	2007
Předmět:	Diffraction chemistry.chemical_compound Materials science Physics and Astronomy (miscellaneous) chemistry Annealing (metallurgy) X-ray crystallography Analytical chemistry Oxide Charge carrier Trapping Data retention Flash memory
Zdroj:	Applied Physics Letters. 91:062909
ISSN:	1077-3118 0003-6951
DOI:	10.1063/1.2768630
Popis:	In this letter, the authors propose the formation of stacked oxide/Y2TiO5/oxide layers for flash memory application. The quality of a high-k Y2TiO5 memory was examined by x-ray diffraction, x-ray photoelectron spectroscopic, atomic force microscopy, capacitance-voltage curves, and data retention. When using Fowler-Nordheim for charging and discharging, the Y2TiO5 memory annealed at 900°C for 30s exhibited large flatband-voltage shifting (memory window of 4.2V) and superior data retention (charge loss of 6% at room temperature) because of the higher probability for trapping the charge carriers and they trapped in the deep trap level of Y2TiO5 due to the formation of a well-crystallized Y2TiO5 structure and the reduction of Y-silicate layer.
Databáze:	OpenAIRE
Externí odkaz:	https://explore.openaire.eu/search/publication?articleId=doi_________::a576158ca1a3f9adb90e85c955b285ff https://doi.org/10.1063/1.2768630 Zobrazit plný text záznamu