Suppression of photoluminescence from wetting layer of InAs quantum dots grown on (311)B GaAs with AlAs cap

Autor:	Yoshinori Nakagawa, Toshiro Isu, Takahiro Kitada, Xiangmeng Lu, S. Matsubara
Rok vydání:	2015
Předmět:	Materials science Photoluminescence business.industry Atomic force microscopy Substrate (electronics) Atmospheric temperature range Condensed Matter Physics Inorganic Chemistry Quantum dot Materials Chemistry Optoelectronics business Molecular beam epitaxy Wetting layer
Zdroj:	Journal of Crystal Growth. 425:106-109
ISSN:	0022-0248
DOI:	10.1016/j.jcrysgro.2015.02.074
Popis:	Self-assembled InAs quantum dots (QDs), without and with an AlAs cap, were grown on (311)B GaAs substrates by molecular beam epitaxy. Surface morphologies of QDs were characterized by atomic force microscopy. Photoluminescence (PL) was performed in the 4–300 K temperature range. For QDs without AlAs cap, sharp and intense PL emitted from wetting layer was observed. PL from QDs was relatively weak at 4 K. The PL intensity of QDs decreased as measurement temperature increased and was not observed at 300 K. For QDs with AlAs cap, PL from WL vanished while PL from QDs were substantially enhanced at 300 K. Suppression of PL from WL indicates that the thickness of WL was reduced due to phase separation result from AlAs cap, which is an effective way to improve the PL of InAs QDs grown on (311)B GaAs substrate.
Databáze:	OpenAIRE
Externí odkaz:	https://explore.openaire.eu/search/publication?articleId=doi_________::a53cda9c3fe0f6bf15818b4bf9f76715 https://doi.org/10.1016/j.jcrysgro.2015.02.074 Zobrazit plný text záznamu Full Text from ScienceDirect