| Autor: |
Scott R. Summerfelt, K. R. Udayakumar, J. Rodriguez-Latorre, Theodore S. Moise, S. Chevacharoenkul, Sudhir K. Madan, Hugh P. McAdams, D. Frystak, Tamer San, P. Ndai, M. Ball, C. Zhou, J. Rodriguez |
| Rok vydání: |
2013 |
| Předmět: |
|
| Zdroj: |
2013 5th IEEE International Memory Workshop. |
| Popis: |
An embedded 448kb 2T-2C FRAM, integrated into a 180nm analog process flow, has been developed and qualified for more than 10years data retention at 125°C. Key electrical characteristics of the memory include wide signal margins with no outlier bits, high endurance write/read cycling (>>1015 cycles), stable retention (>>10yrs at 125°C), and extremely low bit error rate following 260°C Pb-free solder board-attach reflow. Results suggest that the technology can find wide use in applications ranging from consumer electronics to automotive where highly reliable embedded memory and analog components are required. |
| Databáze: |
OpenAIRE |
| Externí odkaz: |
|
