The performance of sintered nanocopper interconnections for high temperature device
| Autor: | Li Gen Wang, Jiang Song Zhang, Jing Guo Zhang, Qipeng Liu, Zhang Guoping, Huaiyu Ye, HuanKun Zhang, Guoqi Zhang, Xianping Chen, Jie Zhu, Sau Wee Koh |
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| Rok vydání: | 2018 |
| Předmět: |
Materials science
Silicon 020208 electrical & electronic engineering Wide-bandgap semiconductor chemistry.chemical_element dBc Working temperature 02 engineering and technology Insulated-gate bipolar transistor 021001 nanoscience & nanotechnology Chip chemistry 0202 electrical engineering electronic engineering information engineering Composite material 0210 nano-technology Porosity |
| Zdroj: | 2018 19th International Conference on Electronic Packaging Technology (ICEPT). |
| DOI: | 10.1109/icept.2018.8480591 |
| Popis: | IGBT device is developed from silicon to wide bandgap semiconductor materials, and its working temperature has reached to 300 °C, so the encapsulation is particularly important. NanoCu paste is investigated under H2 at 300°C. A chip is linked to DBC substrate by nanoCu paste under air with different temperature. Results shows the increase of sintered time temperature effectively reduce the porosity of sintered layer and enhance the strength. |
| Databáze: | OpenAIRE |
| Externí odkaz: |
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