Mo doped BiVO4 gas sensor with high sensitivity and selectivity towards H2S
| Autor: | Xiaokang Qiao, Lichao Jia, Kai Yang, Youxun Xu, Hongqiang Wang, Jingzhou Ma, Can Li |
|---|---|
| Rok vydání: | 2020 |
| Předmět: |
Materials science
General Chemical Engineering Doping chemistry.chemical_element 02 engineering and technology General Chemistry Electronic structure Conductivity 010402 general chemistry 021001 nanoscience & nanotechnology 01 natural sciences Oxygen Industrial and Manufacturing Engineering 0104 chemical sciences Metal Chemical engineering chemistry visual_art visual_art.visual_art_medium Environmental Chemistry Water splitting Sensitivity (control systems) 0210 nano-technology Selectivity |
| Zdroj: | Chemical Engineering Journal. 395:125144 |
| ISSN: | 1385-8947 |
| DOI: | 10.1016/j.cej.2020.125144 |
| Popis: | Multinary metal oxide semiconductor (MOS) based gas sensors have great potentials to attain outstanding selectivity comparing with binary metal oxides owing to their abundant structure types. While, doping is a very versatile route to modify the electronic structure of MOSs and enhance the sensing response to specific gas. Inspired by the encouraging results of Mo doped in the BiVO4 photoanodes for water splitting, herein, the sensing properties of Mo doping effect in BiVO4 were investigated systematically for the first time. The results indicated that the 0.2 at% Mo-doped BiVO4 possess the best gas sensing properties with high sensitivity (S = 16.7), superior selectivity, fast response to 20 ppm H2S at 150 °C. Further analysis indicates that the incorporation of Mo6+ into BiVO4 could adjust the material conductivity, induce the oxygen vacancy and increase the chemisorbed oxygen species. These results suggest that doping Mo into BiVO4 is a promising method to attain superior gas-sensing properties. |
| Databáze: | OpenAIRE |
| Externí odkaz: |
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