Performance Improvement in Tensile-Strained$hbox In_0.5hbox Al_0.5hbox As/hbox In_xhbox Ga_1-xhbox As/hbox In_0.5hbox Al_0.5hbox As$Metamorphic HEMT
| Autor: | Yu-Shyan Lin, C.-L. Wu, Dong-Hai Huang, Wei-Chou Hsu, Jun-Chin Huang, Yeong Jia Chen |
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| Rok vydání: | 2006 |
| Předmět: |
Power gain
Power-added efficiency Materials science Oscillation business.industry Transconductance Direct current Transistor Electrical engineering High-electron-mobility transistor Cutoff frequency Electronic Optical and Magnetic Materials law.invention law Optoelectronics Electrical and Electronic Engineering business |
| Zdroj: | IEEE Transactions on Electron Devices. 53:406-412 |
| ISSN: | 1557-9646 0018-9383 |
| DOI: | 10.1109/ted.2005.863545 |
| Popis: | This paper proposes a $hbox In_0.5hbox Al_0.5$ As/ $hbox In_xhbox Ga_1-xhbox As$break / $hbox In_0.5hbox Al_0.5hbox As$ $(x=0.3-0.5-0.3)$ metamorphic high-electron mobility transistor with tensile-strained channel. The tensile-strained channel structure exhibits significant improvements in dc and RF characteristics, including extrinsic transconductance, current driving capability, thermal stability, unity-gain cutoff frequency, maximum oscillation frequency, output power, power gain, and power added efficiency. |
| Databáze: | OpenAIRE |
| Externí odkaz: |
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