A 16.9 dBm InP DHBT W-band power amplifier with more than 20 dB gain
| Autor: | Hongfei Yao, Yongbo Su, Danyu Wu, Yuxiong Cao, Xiaoxi Ning, Zhi Jin |
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| Rok vydání: | 2013 |
| Předmět: |
Power gain
Materials science business.industry Amplifier Heterojunction bipolar transistor RF power amplifier Electrical engineering Input impedance Condensed Matter Physics Electronic Optical and Magnetic Materials W band Materials Chemistry Optoelectronics Cascode Electrical and Electronic Engineering business Common emitter |
| Zdroj: | Journal of Semiconductors. 34:075005 |
| ISSN: | 1674-4926 |
| DOI: | 10.1088/1674-4926/34/7/075005 |
| Popis: | A two-stage MMIC power amplifier has been realized by use of a 1-μm InP double heterojunction bipolar transistor (DHBT). The cascode structure, low-loss matching networks, and low-parasite cell units enhance the power gain. The optimum load impedance is determined from load-pull simulation. A coplanar waveguide transmission line is adopted for its ease of fabrication. The chip size is 1.5 × 1.7 mm2 with the emitter area of 16 × 1 μm × 15 μm in the output stage. Measurements show that small signal gain is more than 20 dB over 75.5–84.5 GHz and the saturated power is 16.9 dBm @ 79 GHz with gain of 15.2 dB. The high power gain makes it very suitable for medium power amplification. |
| Databáze: | OpenAIRE |
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