The Study on Sensitive Port of Silicon transistors Caused by ESD

Autor:	Liu Shanghe, Liu Hongbing, Qi Shufeng, Yang Jie
Rok vydání:	2006
Předmět:	Electrostatic discharge Materials science Silicon business.industry Transistor Electrical engineering chemistry.chemical_element Port (computer networking) law.invention Human-body model chemistry law business Sensitivity (electronics)
Zdroj:	The 2006 4th Asia-Pacific Conference on Environmental Electromagnetics.
DOI:	10.1109/ceem.2006.257908
Popis:	This paper deals with a sensitive ports study on typical silicon transistors caused by human body model (HBM) electrostatic discharge (ESD). It is shown that the most sensitive port is not always the EB junctions, as most scholars have stated.
Databáze:	OpenAIRE
Externí odkaz:	https://explore.openaire.eu/search/publication?articleId=doi_________::a28137512d177ad52a2198c7a2d21094 https://doi.org/10.1109/ceem.2006.257908 Zobrazit plný text záznamu