Optimizing Optical Parameters to Facilitate Correlation of Laser- and Heavy-Ion-Induced Single-Event Transients in SiGe HBTs
| Autor: | Ani Khachatrian, Delgermaa Nergui, Joseph Harms, Stephen P. Buchner, Joel M. Hales, George N. Tzintzarov, Zachary E. Fleetwood, Anna Erickson, Adrian Ildefonso, Milad Frounchi, Veronique Ferlet-Cavrois, Jeffrey H. Warner, John D. Cressler, Dale McMorrow, Kay Voss |
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| Rok vydání: | 2019 |
| Předmět: |
Nuclear and High Energy Physics
Materials science 010308 nuclear & particles physics business.industry Heterojunction bipolar transistor Physics::Optics Pulse duration Laser 01 natural sciences law.invention Pulsed laser deposition Wavelength Semiconductor Nuclear Energy and Engineering law 0103 physical sciences Optoelectronics Waveform Electrical and Electronic Engineering business Absorption (electromagnetic radiation) |
| Zdroj: | IEEE Transactions on Nuclear Science. 66:359-367 |
| ISSN: | 1558-1578 0018-9499 |
| Popis: | An approach for determining the optimal laser parameters (i.e., pulse energy, focused spot size, wavelength, and pulse duration) for correlating single-event transients induced via two-photon absorption (TPA) and heavy ions is presented. The approach focuses on identification and extraction of waveform characteristics, or “features,” and minimizing the error between features produced by TPA and ions. Modifying optical parameters can directly impact the waveform features of the TPA-induced transients. Consequently, optimal laser parameters that minimize the error between features extracted for laser- and ion-induced waveforms can be determined. In this paper, the laser pulse energy and spot size were varied, while maintaining a fixed pulse duration and wavelength, and the resulting transients were compared to ion-induced transients. When the optimized optical parameters are used, excellent agreement was achieved between laser- and ion-induced transient waveforms in a silicon-germanium heterojunction bipolar transistor (SiGe HBT). In addition, a one-to-one correlation between heavy-ion linear energy transfer (LET) and laser pulse energy was obtained for a particular spot size ( $\omega _{0} = 1.89\,\,\mu \text{m}$ (HW $1/e^{2}$ )). These results show that a correlation between LET and pulse energy is achievable when the remaining optical parameters are selected appropriately. Although the results presented are for SiGe HBTs, the generality of the approach should allow it to be extended to other semiconductor platforms. |
| Databáze: | OpenAIRE |
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