Measuring self-aligned quadruple patterning pitch walking with scatterometry-based metrology utilizing virtual reference
| Autor: | Cornel Bozdog, Taher Kagalwala, Prasad Dasari, Paul Isbester, Alok Vaid, Michael Lenahan, Michael Shifrin, Yoav Etzioni, Aron Cepler, Naren Yellai, Sridhar Mahendrakar, Fang Fang |
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| Rok vydání: | 2016 |
| Předmět: |
Fin
Computer science business.industry Mechanical Engineering Acoustics Work (physics) Process (computing) 02 engineering and technology 021001 nanoscience & nanotechnology Condensed Matter Physics 01 natural sciences Atomic and Molecular Physics and Optics Finite element method Electronic Optical and Magnetic Materials Metrology law.invention 010309 optics Optics law 0103 physical sciences Electrical and Electronic Engineering Photolithography 0210 nano-technology business Reduction (mathematics) |
| Zdroj: | Journal of Micro/Nanolithography, MEMS, and MOEMS. 15:044004 |
| ISSN: | 1932-5150 |
| DOI: | 10.1117/1.jmm.15.4.044004 |
| Popis: | Advanced technology nodes, 10 nm and beyond, employing multipatterning techniques for pitch reduction pose new process and metrology challenges in maintaining consistent positioning of structural features. A self-aligned quadruple patterning (SAQP) process is used to create the fins in FinFET devices with pitch values well below optical lithography limits. The SAQP process bears the compounding effects from successive reactive ion etch and spacer depositions. These processes induce a shift in the pitch value from one fin compared to another neighboring fin. This is known as pitch walking. Pitch walking affects device performance as well as later processes, which work on an assumption that there is consistent spacing between fins. In SAQP, there are three pitch walking parameters of interest, each linked to specific process steps in the flow. These pitch walking parameters are difficult to discriminate at a specific process step by singular evaluation technique or even with reference metrology, such as transmission electron microscopy. We will utilize a virtual reference to generate a scatterometry model to measure pitch walk for SAQP process flow. |
| Databáze: | OpenAIRE |
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