Properties of metal contact on a-Si: H annealed at low temperature
| Autor: | Yasuo Gekka, Hiroshi Tanaka, Makio Akimoto, Hiroshi Mawatari |
|---|---|
| Rok vydání: | 1992 |
| Předmět: |
Amorphous silicon
Materials science Annealing (metallurgy) Metallurgy Ultra-high vacuum Analytical chemistry Dangling bond General Physics and Astronomy Surfaces and Interfaces General Chemistry Condensed Matter Physics Surfaces Coatings and Films Metal Condensed Matter::Materials Science chemistry.chemical_compound chemistry Vacuum deposition Sputtering visual_art visual_art.visual_art_medium Surface states |
| Zdroj: | Applied Surface Science. :558-562 |
| ISSN: | 0169-4332 |
| DOI: | 10.1016/0169-4332(92)90288-9 |
| Popis: | Hydrogenated amorphous silicon (a-Si:H) films were deposited by a tetrode RF sputtering method and annealed at a low temperature of 200°C in high vacuum for 120 min. Metal/a-Si:H interfaces were formed by vacuum deposition on the surfaces of annealed a-Si:H films. The effect of low temperature annealing prior to metal deposition on the properties of the interface was studied. The electrical characteristics of the metal contacts on the surfaces of annealed a-Si:H showed that the low temperature annealing decreases the density of surface states of the a-Si:H films. The decrease of the density of surface states by low temperature annealing was investigated considering diffusion of nonbonding excess hydrogen atoms from the bulk to the surface and the termination of the Si dangling bonds in the surfaces of the a-Si:H films. |
| Databáze: | OpenAIRE |
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