New approaches for growth control of GaN-based HEMT structures

Autor:	Hilde Hardtdegen, G. Heidelberger, N. Kaluza, H. L. Bay, Michel Marso, Yong Suk Cho, Konrad Wirtz, R. Steins, M. von der Ahe
Rok vydání:	2007
Předmět:	Process modeling Basic knowledge Materials science Process (computing) General Materials Science Growth control Power application Nanotechnology Heterojunction General Chemistry Metalorganic vapour phase epitaxy High-electron-mobility transistor Engineering physics
Zdroj:	Applied Physics A. 87:491-498
ISSN:	1432-0630 0947-8396
DOI:	10.1007/s00339-007-3933-9
Popis:	This paper reports on new approaches for growth control of GaN-based heterostructures for high frequency and high power application. First in situ methods are presented and their further development discussed [1]. The development leads to a greatly improved observation of growth parameter influences in the MOVPE of GaN. A new growth process is introduced which enhances growth reproducibility [2]. This new growth process is then optimized with respect to the envisaged application. To this end process modeling will be employed. The application envisaged is the AlxGa1-xN/GaN high electron mobility transistor (HEMT). At last device results will be presented. All in all it will be shown how fundamental research can drive technology and how basic knowledge can be employed for process development with respect to device applications.
Databáze:	OpenAIRE
Externí odkaz:	https://explore.openaire.eu/search/publication?articleId=doi_________::a1a0c9be23065efdb5366df8958084cb https://doi.org/10.1007/s00339-007-3933-9 Zobrazit plný text záznamu Plný text ve formátu PDF