P-109: Reduced Contact Resistance with MoOxInjection Layer for Thin Film Transistors Based on Organic Semiconductors with Deep HOMO Level

Autor:	Hyeok Kim, Jeongkyun Roh, Hyeonwoo Shin, Heebum Roh, Changhee Lee
Rok vydání:	2016
Předmět:	Organic semiconductor Materials science Transmission line Thin-film transistor business.industry Contact resistance Electronic engineering Optoelectronics business Layer (electronics)
Zdroj:	SID Symposium Digest of Technical Papers. 47:1535-1538
ISSN:	0097-966X
DOI:	10.1002/sdtp.10993
Popis:	We investigated the contact resistance of the OTFTs based on dinaphtho[2,3-b:2',3'-f]thieno[3,2-b]-thiophene (DNTT) as a representative organic semiconductors with deep HOMO level. We confirmed a dramatic decrease in the contact resistance with the MoOx injection layer by transmission line method and y-function method.
Databáze:	OpenAIRE
Externí odkaz:	https://explore.openaire.eu/search/publication?articleId=doi_________::a157e66af16f41849a53956a84452fc4 https://doi.org/10.1002/sdtp.10993 Zobrazit plný text záznamu Plný text