Contribution of numerical simulation to silicon carbide bulk growth and epitaxy

Autor:	Roland Madar, Michail Anikin, Lea Di Cioccio, Jérôme Meziere, Michel Pons, Etienne Pernot, Thierry Billon, Francis Baillet, J.M. Dedulle, Pierre Ferret, Elisabeth Blanquet
Rok vydání:	2004
Předmět:	Fabrication Materials science Chemical vapor deposition Condensed Matter Physics Engineering physics Carbide Surface coating chemistry.chemical_compound chemistry Physical vapor deposition Silicon carbide Deposition (phase transition) General Materials Science Thin film
Zdroj:	Journal of Physics: Condensed Matter. 16:S1579-S1595
ISSN:	1361-648X 0953-8984
DOI:	10.1088/0953-8984/16/17/009
Popis:	High temperature epitaxial processes for SiC bulk and thin films by physical vapour transport and chemical vapour deposition are reviewed from an academic point of view using heat and mass transfer modelling and simulation. The objective is to show that this modelling approach could provide information on fabrication and characterization for the improvement of the knowledge of the growth history. Recent results of our integrated research programme on SiC, taking into account the fabrication, process modelling and characterization, will be presented.
Databáze:	OpenAIRE
Externí odkaz:	https://explore.openaire.eu/search/publication?articleId=doi_________::a0d8851a4ecd7ae3637682cba2c40e1e https://doi.org/10.1088/0953-8984/16/17/009 Zobrazit plný text záznamu