Self-consistent simulation of carrier confinement characteristics in (AlyGa1−yN/AlN)SLs/GaN/(InxGa1−xN/GaN)MQW/GaN heterostructures

Autor: Xiaoliang Wang, Jieqin Ding, Jiang Lijuan, Cuimei Wang, Hong Chen, Haibo Yin, Chun Feng, Hongling Xiao
Rok vydání: 2012
Předmět:
Zdroj: Journal of Alloys and Compounds. 523:88-93
ISSN: 0925-8388
DOI: 10.1016/j.jallcom.2012.01.073
Popis: We present calculations of carrier confinement characteristics in (Al y Ga 1− y N/AlN)SLs/GaN/(In x Ga 1− x N/GaN)MQW/GaN heterojunction structure in the presence of spontaneous and piezoelectrically induced polarization effects. The calculations were made using a self-consistent solution of the Schrodinger, Poisson, potential and charge balance equations. An optimization of In x Ga 1− x N/GaN multiquantum-well (MQW) was made firstly including thickness of GaN channel, InGaN, and indium composition of In x Ga 1− x N in order to increase carrier density and mobility, and the influence of pairs of AlGaN/AlN superlattices (SLs) and InGaN/GaN MQWs on structure was discussed. Theoretical calculations clearly indicate that the two-dimensional electron gas (2DEG) sheet carrier density in designed heterostructure is greatly increased due to the enhancing of carrier confinement compared to those in conventional AlGaN/GaN one at the similar Al composition. Furthermore, the calculated carrier distribution shows that carrier mobility will be improved by reducing interface roughness and alloy disorder scattering in designed heterostructure.
Databáze: OpenAIRE
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