Dopant Diffusion Barrier Properties of Ultrathin, Chemically Grown Oxide Films
| Autor: | S. B. Herner, V. L. Eckert |
|---|---|
| Rok vydání: | 2006 |
| Předmět: |
Materials science
Diffusion barrier Dopant General Chemical Engineering Oxide Nanotechnology Composition analysis Amorphous solid chemistry.chemical_compound N incorporation Chemical engineering chemistry Atom Electrochemistry General Materials Science Electrical and Electronic Engineering Physical and Theoretical Chemistry |
| Zdroj: | Electrochemical and Solid-State Letters. 9:G34-G36 |
| ISSN: | 1944-8775 1099-0062 |
| DOI: | 10.1149/1.2146705 |
| Popis: | The dopant diffusion barrier property of a chemically grown oxide (CGO) film has been characterized in polysilicon. The CGO film was grown by immersion of an amorphous Si film in a mixture of H 2 O 2 , NH 4 OH, and H 2 O liquids, heated to 55°C. The 4.7 A CGO film behaves as a superior dopant diffusion barrier compared to a 12.7 A thermally grown oxide (TOO) film. Composition analysis shows the CGO film has 0.4 atom % N while the TOO has no detectable N. The superior barrier property of the thinner CGO film is attributed to N incorporation. |
| Databáze: | OpenAIRE |
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