Sn incorporation into InP grown by molecular beam epitaxy: A secondary‐ion mass spectrometry study

Autor:	Morton B. Panish, R. A. Hamm, L. C. Hopkins
Rok vydání:	1990
Předmět:	Secondary ion mass spectrometry Ion implantation Physics and Astronomy (miscellaneous) Chemistry Monolayer Analytical chemistry Heterojunction Mass spectrometry Layer (electronics) Beam (structure) Molecular beam epitaxy
Zdroj:	Applied Physics Letters. 56:2301-2303
ISSN:	1077-3118 0003-6951
DOI:	10.1063/1.102947
Popis:	Secondary‐ion mass spectrometric analysis of InP/Ga0.47In0.53As heterostructures incorporating Sn‐doped regions has been used to study the distribution of Sn in InP during molecular beam epitaxy. Depending upon the flux conditions, up to a monolayer of Sn can accumulate on the growing InP surface, and the surface accumulation mediates the incorporation of Sn into the growing layer. The surface to bulk distribution ratio of Sn per monolayer grown is less than 10−3. Once the surface has been saturated all additional Sn in the beam is incorporated and concentrations exceeding 1020 cm−3 can be achieved.
Databáze:	OpenAIRE
Externí odkaz:	https://explore.openaire.eu/search/publication?articleId=doi_________::9f9eb6cf979e2a027ac6b6c2069f2149 https://doi.org/10.1063/1.102947 Zobrazit plný text záznamu