Synthesis of simple, low cost and benign sol–gel Cu2InxZn1−xSnS4alloy thin films: influence of different rapid thermal annealing conditions and their photovoltaic solar cells
| Autor: | Fengyou Wang, Zhanwu Wang, Shiquan Lv, Yingrui Sui, Yu Zhang, Lili Yang, Yanbo Gao, Yunfei Sun, Maobin Wei, Yanjie Wu, Bin Yao |
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| Rok vydání: | 2018 |
| Předmět: |
010302 applied physics
Materials science Open-circuit voltage Band gap General Chemical Engineering Doping 02 engineering and technology General Chemistry 021001 nanoscience & nanotechnology 01 natural sciences law.invention chemistry.chemical_compound Chemical engineering chemistry law 0103 physical sciences Solar cell Grain boundary CZTS Thin film 0210 nano-technology Sol-gel |
| Zdroj: | RSC Advances. 8:9038-9048 |
| ISSN: | 2046-2069 |
| DOI: | 10.1039/c7ra12289f |
| Popis: | Cu2InxZn1−xSnS4 (x = 0.4) alloy thin films were synthesized on soda lime glass (SLG) substrate by a simple low-cost sol–gel method followed by a rapid annealing technique. The influence of sulfurization temperature and sulfurization time on the structure, morphology, optical and electrical properties of Cu2InxZn1−xSnS4 thin films was investigated in detail. The XRD and Raman results indicated that the crystalline quality of the Cu2InxZn1−xSnS4 alloy thin films was improved, accompanied by metal deficiency, particularly tin loss with increasing the sulfurization temperature and sulfurization time. From absorption spectra it is found that the band gaps of all Cu2InxZn1−xSnS4 films are smaller than that (1.5 eV) of the pure CZTS film due to In doping, and the band gap of the Cu2InxZn1−xSnS4 films can be tuned in the range of 1.38 to 1.19 eV by adjusting the sulfurization temperature and sulfurization time. Hall measurement results showed that all Cu2InxZn1−xSnS4 alloy thin films showed p-type conductivity characteristics, the hole concentration decreased and the mobility increased with the increase of sulfurization temperature and sulfurization time, which is attributed to the improvement of the crystalline quality and the reduction of grain boundaries. Finally, the Cu2InxZn1−xSnS4 film possessing the best p-type conductivity with a hole concentration of 9.06 × 1016 cm−3 and a mobility of 3.35 cm2 V−1 s−1 was obtained at optimized sulfurization condition of 580 °C for 60 min. The solar cell using Cu2InxZn1−xSnS4 as the absorber obtained at the optimized sulfurization conditions of 580 °C for 60 min demonstrates a power conversion efficiency of 2.89%. We observed an increment in open circuit voltage by 90 mV. This work shows the promising role of In in overcoming the low Voc issue in Cu-kesterite thin film solar cells. |
| Databáze: | OpenAIRE |
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