Growth of SiGe/Si quantum well structures by atmospheric pressure chemical vapor deposition
| Autor: | Alexander Zaslavsky, Adrian Powell, R. A. Kiehl, W. Ziegler, Detlev Grützmacher, J. Cotte, T. O. Sedgwick |
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| Rok vydání: | 1993 |
| Předmět: |
Atmospheric pressure
business.industry Superlattice Resonant-tunneling diode Analytical chemistry chemistry.chemical_element Germanium Chemical vapor deposition Condensed Matter::Mesoscopic Systems and Quantum Hall Effect Condensed Matter Physics Electronic Optical and Magnetic Materials chemistry Materials Chemistry Tunnel diode Optoelectronics Electrical and Electronic Engineering business Quantum well Quantum tunnelling |
| Zdroj: | Journal of Electronic Materials. 22:303-308 |
| ISSN: | 1543-186X 0361-5235 |
| DOI: | 10.1007/bf02661381 |
| Popis: | First structural and electrical data are reported for SiGe/Si quantum well structures grown by a new ultra clean low temperature epitaxial deposition process at atmospheric pressure. It is found that the process suppresses the segregation of germanium, possibly by a chemical termination of the surface during the growth. Mutiple-quantum-well structures with controllable well widths and abrupt interfaces have been prepared at temperatures ranging from 550 to 650°C. Magneto-transport measurements of modulation doped quantum wells reveal hole mobilities of 2000 cm2/Vs at 4.2 K at a carrier density of 1.7*1012 cm−2 and a germanium concentration of 18% in the SiGe channel. Resonant tunneling diodes grown by this technique exhibit well resolved regions of negative differential resistance within a very symmetric I-V characteristic. |
| Databáze: | OpenAIRE |
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