Recent progress in devices and circuits based on wafer-scale transition metal dichalcogenides
| Autor: | Haima Zhang, Puyang Cai, Hongwei Tang, Xinyu Chen, Xinzhi Zhang, Yin Wang, Wenzhong Bao |
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| Rok vydání: | 2019 |
| Předmět: |
Gapless playback
Materials science General Computer Science Scale (ratio) 0202 electrical engineering electronic engineering information engineering 020207 software engineering Wafer Ranging Field-effect transistor 02 engineering and technology Scale transition Engineering physics Electronic circuit |
| Zdroj: | Science China Information Sciences. 62 |
| ISSN: | 1869-1919 1674-733X |
| DOI: | 10.1007/s11432-019-2651-x |
| Popis: | Two-dimensional layered materials (2DLMs) have triggered a broad researchthrust over the last decade worldwide. Different from the gapless graphene,transition metal dichalcogenides (TMDs) exhibit versatile bandstructure, withbandgap sizes ranging from semi-metallic to over 2 eV. Therefore, 2D-TMDscan be utilized in various applications from logic to optoelectronicdevices. In this review we first introduce the latest developments of thewafer-scale synthesis of continuous TMD films, then we present recentadvances in large scale devices and circuits based on TMD films, includinglogic, memory, optoelectronic and analog devices. We also provide aperspective and a look at the future device applications based onwafer-scale 2D-TMDs. |
| Databáze: | OpenAIRE |
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