Modeling and Simulation of VO2/Au Thin Film Transition Behavior
Autor: | S. Lafane, Mohamed El-Amine Benamar, Ahdelkader Hassein-Bey, Asmaa Leila Sabeha Hassein-Bey, Hakim Tahi, S. Abdelli-Messaci |
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Rok vydání: | 2018 |
Předmět: |
Materials science
business.industry Multiphysics 02 engineering and technology 021001 nanoscience & nanotechnology 01 natural sciences Modeling and simulation Semiconductor Electrical resistance and conductance Electrical resistivity and conductivity 0103 physical sciences Optoelectronics Metal–insulator transition Thin film 010306 general physics 0210 nano-technology business Polarization (electrochemistry) |
Zdroj: | 2018 IEEE International Conference on Semiconductor Electronics (ICSE). |
DOI: | 10.1109/smelec.2018.8481217 |
Popis: | Vanadium dioxide (VO 2 ) exhibits a metal-insulator transition (MIT) near 68°C with a unique sharp resistivity change. Below this temperature, it behaves as a semiconductor with a high electrical resistivity, above it the material behaves as a metal with a low electrical resistivity. In this paper, modeling and FEM simulation using Comsol Multiphysics of metal-insulator transition behavior in VO 2 /Au thin film have been carried out in order to evaluate the electrical resistance behavior as a function of applied voltage and temperature sweeps. The simulation results present a similar transition behavior as in experiments owning a good sensitivity even at room temperature under a specific voltage. In addition, these simulations could be of a great interest to design potential sensors based on this transition metal oxide materials thin layer. The simulation results could be used as a powerful design tool for several MIT-based sensors and predict the feasibility of a variety of device with a high sensitivity at ambient temperature. Our simulations predict a transition at room-temperature under polarization of about $4.25\mathrm{V}$ . Practically, in term of operating temperature range many applications are targeted going from data storage device to biosensors. |
Databáze: | OpenAIRE |
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