Fringing-induced barrier lowering (FIBL) in sub-100 nm MOSFETs with high-K gate dielectrics

Autor:	Geoffrey Choh-Fei Yeap, Ming-Ren Lin, Srinath Krishnan
Rok vydání:	1998
Předmět:	Permittivity Materials science business.industry Gate length Electrical engineering Oxide Dielectric Capacitance chemistry.chemical_compound chemistry MOSFET Optoelectronics Degradation (geology) Electrical and Electronic Engineering business High-κ dielectric
Zdroj:	Electronics Letters. 34:1150
ISSN:	0013-5194
Popis:	Fringing-induced barrier lowering (FIBL), a new anomalous degradation in device turn-off/on characteristics in sub-100 nm devices with high-K gate dielectrics, is reported. FIBL is clearly evident for K>25 and worsens as K increases (without buffer oxide). With a buffer oxide, FIBL can be completely suppressed for K
Databáze:	OpenAIRE
Externí odkaz:	https://explore.openaire.eu/search/publication?articleId=doi_________::9d752022b2dd60e9d21bc2aa01e34947 https://doi.org/10.1049/el:19980800 Zobrazit plný text záznamu