Fringing-induced barrier lowering (FIBL) in sub-100 nm MOSFETs with high-K gate dielectrics

Autor: Geoffrey Choh-Fei Yeap, Ming-Ren Lin, Srinath Krishnan
Rok vydání: 1998
Předmět:
Zdroj: Electronics Letters. 34:1150
ISSN: 0013-5194
Popis: Fringing-induced barrier lowering (FIBL), a new anomalous degradation in device turn-off/on characteristics in sub-100 nm devices with high-K gate dielectrics, is reported. FIBL is clearly evident for K>25 and worsens as K increases (without buffer oxide). With a buffer oxide, FIBL can be completely suppressed for K
Databáze: OpenAIRE