High thermoelectric power factors in sputter-deposited polycrystalline n-type BaSi2 films
| Autor: | Kazuki Kido, Ryuichi Yoshida, Ryota Koitabashi, Hayato Hasebe, Yudai Yamashita, Tomoki Ozawa, Masami Mesuda, Kaoru Toko, Takashi Suemasu |
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| Rok vydání: | 2022 |
| Předmět: | |
| Zdroj: | Japanese Journal of Applied Physics. 62:SD1008 |
| ISSN: | 1347-4065 0021-4922 |
| DOI: | 10.35848/1347-4065/aca59a |
| Popis: | We formed n-type polycrystalline semiconducting BaSi2 films on insulating silicon nitride films by sputtering and investigated their electrical and thermoelectric properties. The electron concentration of the grown films was approximately 1015–1016 cm−3 at room temperature, and the electron mobility was higher than 103 cm2 V−1 s−1 despite the polycrystalline films being randomly oriented. The films contained a large concentration of oxygen (1.5 × 1021 cm−3). A large thermoelectric power factor of 386 μW m−1 K−2 was obtained at 309 K for B-doped n-BaSi2 films. This value is approximately 8.6 times higher than the previous highest power factor reported for n-BaSi2. |
| Databáze: | OpenAIRE |
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