Technical aspects of 〈$ \bf 11\bar 20 $〉 4H-SiC MOSFET processing
| Autor: | Caroline Le Blanc, Marcin Zielinski, Sandrine Juillaguet, Sylvie Contreras, Yves Monteil, V. Souliere, Dominique Tournier, Phillippe Godignon, Jean Camassel |
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| Rok vydání: | 2005 |
| Předmět: |
Photoluminescence
business.industry Chemistry Annealing (metallurgy) 020502 materials Doping Analytical chemistry 02 engineering and technology Surfaces and Interfaces 021001 nanoscience & nanotechnology Condensed Matter Physics Epitaxy Surfaces Coatings and Films Electronic Optical and Magnetic Materials Active layer 0205 materials engineering Hall effect MOSFET Materials Chemistry Optoelectronics Wafer Electrical and Electronic Engineering 0210 nano-technology business |
| Zdroj: | physica status solidi (a). 202:680-685 |
| ISSN: | 1862-6319 1862-6300 |
| DOI: | 10.1002/pssa.200460473 |
| Popis: | In order to process n-type channel MOSFETs on (1120)-oriented 4H-SiC wafers one has to optimise, independently, many different steps. First is the growth of the active epitaxial layer, including the effect of p-type doping. Next is the oxidation and, finally, the n-type implantation for source and drain formation. In this work, we investigate the growth and doping of the p-type doped epitaxial layer on the (1120)-oriented substrate using, both, SIMS, low temperature photoluminescence measurements and Hall effect measurement to control the final doping level. Next we investigate the change in oxidation kinetics with respect to the conventional (0001) surfaces. Finally, we evaluate the efficiency of implantation and annealing processes. |
| Databáze: | OpenAIRE |
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