Thin-Film Baroresistors Based on Sm1 – xGdxS Solid Solutions
| Autor: | N. N. Stepanov, G. A. Kamenskaja, V. V. Kaminsky, S. M. Soloviev, S. E. Alexandrov, G. D. Khavrov |
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| Rok vydání: | 2021 |
| Předmět: |
010302 applied physics
Materials science Explosive material Sedimentation (water treatment) Analytical chemistry Evaporation 02 engineering and technology 021001 nanoscience & nanotechnology Condensed Matter Physics 01 natural sciences Atomic and Molecular Physics and Optics Electronic Optical and Magnetic Materials Gas phase Temperature and pressure 0103 physical sciences Crystallite Thin film 0210 nano-technology Solid solution |
| Zdroj: | Semiconductors. 55:25-27 |
| ISSN: | 1090-6479 1063-7826 |
| DOI: | 10.1134/s1063782621010103 |
| Popis: | The effect of the Gd concentration on the temperature and pressure coefficients of the resistance of thin polycrystalline films of Sm1 – xGdxS solid solutions, where x = 0, 0.05, 0.1, 0.2, 0.33, and 0.5 is studied. The films are grown by explosive evaporation in vacuum of powders of the initial compounds and sedimentation of the latter from the gas phase onto glass substrates. The dependences of the temperature α and pressure β coefficients of the resistance are determined, as well as their ratios γ on the Gd concentration x in the system of SmS–GdS solid solutions, based on which the optimum compositions for fabricating thin-film piezoresistors and baroresistors are determined. |
| Databáze: | OpenAIRE |
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