| Autor: |
Paulius Malinovskis, Remigijus Vasiliauskas, A. Mekys, Mikael Syväjärvi, J. Storasta, Rositza Yakimova |
| Rok vydání: |
2013 |
| Předmět: |
|
| Zdroj: |
Materials Science Forum. :335-338 |
| ISSN: |
1662-9752 |
| Popis: |
The 3C-SiC layers on nominally on-axis 6H-SiC substrates were grown using sublimation epitaxy. More than 90% coverage by 3C-SiC is typically achieved at growth temperature of 1775°C. The main reason for the polytype inclusions to appear is local supersaturation non-uniformities over the sample surface which appear due to the temperature gradient and spiral growth nature of 6H-SiC. On the 6H-SiC spirals with small steps supersaturation is smaller and 3C-SiC nucleation and growth is diminished. Due to surface free energy and surface diffusion differences, polytype inclusions appear differently when 3C-SiC is grown on the Si- and C-faces. The 6H-SiC inclusions as well as twin boundaries act as neutral scattering centers and lower charge carrier mobility. |
| Databáze: |
OpenAIRE |
| Externí odkaz: |
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