Crosstalk Suppression Method for GaN-Based Bridge Configuration Using Negative Voltage Self-Recovery Gate Drive

Autor:	Dian Guo Xu, Binxing Li, Chengrui Li, Gaolin Wang, Guoqiang Zhang, Shaobo Liu
Rok vydání:	2022
Předmět:	Materials science business.industry Voltage divider Gallium nitride Integrated circuit law.invention chemistry.chemical_compound Capacitor chemistry law visual_art Electronic component visual_art.visual_art_medium Optoelectronics Electrical and Electronic Engineering Resistor business Diode Voltage
Zdroj:	IEEE Transactions on Power Electronics. 37:4406-4418
ISSN:	1941-0107 0885-8993
Popis:	In order to suppress the crosstalk in gallium nitride (GaN)-based bridge configuration, a novel negative voltage self-recovery gate drive (NVSRGD) is proposed in this paper. The resistor-capacitor-diode voltage divider is applied to establish the negative gate-source voltage and suppress the impact of positive crosstalk. The antiparallel diode is added to constitute low-impedance Miller current path from the driver integrated circuit (IC) to the GaN device. It works together with the self-recovery gate-source voltage to suppress the negative crosstalk, which not only prevents the GaN device from the negative overstress but also reduces the reverse conduction loss during the dead time. The NVSRGD is composed of a few passive components, which are suitable for integrating into the driver IC. The capacitors and resistors of the NVSRGD are designed to determine the negative voltage level and the restore time. Additive separate negative voltage power supplies or active devices are not needed. The double pulse test based on GS66508B verifies the effectiveness of the proposed method for suppressing the positive and negative crosstalk of GaN devices.
Databáze:	OpenAIRE
Externí odkaz:	https://explore.openaire.eu/search/publication?articleId=doi_________::9c1965b84464283911429a420bf1f420 https://doi.org/10.1109/tpel.2021.3119974 Zobrazit plný text záznamu