Optical absorption dependence on composition and thickness of InxGa1−xN (0.05<×<0.22) grown on GaN/sapphire
| Autor: | Robert L. Opila, Balakrishnam Jampana, Ian T. Ferguson, Conan Weiland, Christiana B. Honsberg |
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| Rok vydání: | 2012 |
| Předmět: |
Diffraction
Materials science Photoluminescence business.industry Metals and Alloys Surfaces and Interfaces Indium gallium nitride Epitaxy Surfaces Coatings and Films Electronic Optical and Magnetic Materials law.invention chemistry.chemical_compound chemistry law Solar cell Materials Chemistry Sapphire Optoelectronics sense organs Thin film business Absorption (electromagnetic radiation) |
| Zdroj: | Thin Solid Films. 520:6807-6812 |
| ISSN: | 0040-6090 |
| DOI: | 10.1016/j.tsf.2012.07.003 |
| Popis: | We report the change in optical absorption properties of InGaN epilayers around the critical layer thickness determined from X-ray diffraction. Detrimental sub-band gap absorption is observed in InGaN thin films grown beyond the critical layer thicknesses, and is caused by localized electric fields around extended crystalline defects and aided by V-defects through light channeling. The photoluminescence response from InGaN thin films, grown beyond the critical layer thickness, is reduced owing to absorption of the incident laser light by non-radiative recombination extended crystalline defects. The formation of V-defects is observed to occur beyond the critical layer thickness and continues to grow in areal coverage aiding in sub-band gap absorption. This optical behavior sets constraints to be incorporated in the design of InGaN solar cell and requirement for improvement in epitaxial growth techniques to reduce V-defects. |
| Databáze: | OpenAIRE |
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