Effect of the Substrate Heating Due to the Sputtering Process on the Crystallinity of TiO2 Thin Films

Autor:	Rodrigo Sávio Pessoa, H. S. Maciel, Marcos Massi, T. B. Liberato, H. Toku, A. S. da Silva Sobrinho
Rok vydání:	2007
Předmět:	Crystallinity Materials science Silicon chemistry Sputtering chemistry.chemical_element Limiting oxygen concentration Substrate (electronics) Gas composition Sputter deposition Composite material Thin film
Zdroj:	ECS Transactions. 9:189-197
ISSN:	1938-6737 1938-5862
Popis:	This article reports on the effect of the increase of substrate temperature due to the plasma discharge on the crystalline structure of the TiO2 thin films deposited on silicon by the magnetron sputtering technique. The influence on the film crystallinity was evaluated as a function of process parameters, such as, substrate-to-target distance and reactive gas concentration. The substrate holder was equipped with two thermocouples in order to measure simultaneously the substrate temperature Ts and the substrate surface temperature Tsurf during the deposition. The films were analyzed by X-ray diffractometry (XRD) and profilometry. Results show that the critical temperature to obtain crystalline films depends upon the gas composition and it varies from 170ºC - 210ºC for oxygen concentration in the gas mixture varying from 20 to 100%.
Databáze:	OpenAIRE
Externí odkaz:	https://explore.openaire.eu/search/publication?articleId=doi_________::9b324cdc0888e2c895d979ba9e3ab033 https://doi.org/10.1149/1.2766888 Zobrazit plný text záznamu